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堆疊沉積: 交替氧化物（藍色）和氮化物（綠色）薄膜沉積（每個堆疊 >200 對）
ON stack deposition: Alternating oxide (blue) and nitride (green) thin film deposition (>200 pairs per stack)

通道蝕刻: 沉積硬掩模, 形成開口, 高縱橫比通道貫穿所有層（每個晶片>1 萬億個孔）
Channel etch: Hard mask deposited, openings formed, high aspect ratio (HAR) channels etched through all layers. (>1 trillion holes per wafer)

階梯蝕刻: 字線的接觸焊盤是使用產生階梯結構的受控蝕刻來創建的.
Staircase etch: Contact pads to the wordlines are created using controlled etches that produce the staircase structure.

均勻的厚度對電氣性能至關重要. Aston™ 質譜分析儀可實現厚度控制, 層定義和化學計量工程.
Uniform thickness is critical for electrical performance. ASTON enables thickness control, layer definition and stoichiometric engineering.

高縱橫比通道孔必須從上到下完整且均勻, 沒有彎曲或扭曲. Aston™ 質譜能夠在腔內測量蝕刻反應物.
High aspect ratio channel holes must be complete and uniform top to bottom with no bowing or twisting. ASTON enables in-chamber measurement of etch reactants.

蝕刻輪廓控制精度（埃）. 蝕刻深度能力（微米）.
Aston™ 質譜儀通過動態測量化學物質來實現蝕刻
Etched profile control precision (angstroms). Etch depth capability (microns). ASTON enables etch engineering by measuring chemicals dynamically.

狹縫蝕刻: 沉積硬掩模層, 形成硬開口圖案, 蝕刻狹縫以分離通道孔列. 這將創建一個存儲單元陣列.
Slits etch: Hard mask layer deposited, hard openings patterned, slits etched to separate the columns of channel holes. This creates an array of memory cells.

字線沉積: 在一些 3D NAND 方案中, 去除氮化物層, 然後使用由內向外的原子層沉積工藝（紫色）創建鎢字線.
Wordlines deposition: In some 3D NAND schemes, nitride layers are removed, then tungsten wordlines are created with an inside-out atomic layer deposition process (purple).

晶圓上最終 3D NAND 結構的橫截面
Cross-section of final 3D NAND structure on wafer.

Aston™ 質譜儀通過連續測量反應物來實現蝕刻的均勻性和精度.
ASTON enables uniformity and precision of etch by continuous measurement of reactants.

完全去除氮化層並填充鎢. Aston™ 質譜儀實現了分子水準的控制.
Complete removal of nitride layer and fill with tungsten. ASTON enables molecular-level control.