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伯東公司日本 Atonarp Aston™ 質譜儀 ALD 工藝控制的原位計量
原子層沉積 ALD 是一種廣泛且越來越多地用於先進半導體製造記憶體（3D-NAND 和新興的堆疊式 DRAM ）和先進邏輯制程 (例如全環繞柵極) 的工藝. 這些工藝的特點是需要精確控制幾十個分子厚的薄膜層, 通常測量只有幾十埃（1Å=1x10-10m).
Atomic Level Deposition (ALD) is a process that is used extensively and increasingly in advanced semiconductor manufacturing of memories (3D-NAND and emerging Stacked DRAM) and advanced logic processes (such as gate-all-around). These processes are characterized by the need for precisely controlled thin-film layers which are a few tens of molecules thick, often measuring only a few 10’s of angstroms (1Å=1x10-10m).

使用 ALD 可以沉積多種材料, 包括氧化物, 氮化物和金屬. ALD 工藝被廣泛使用, 因為它提供了超薄, 高度可控的單層材料, 這些材料本質上是保形和無針孔的. 從 2020 年到 2025 年, ALD 市場預計將以 16%-20% 的複合年增長率增長（來源: ASM）.
A wide range of materials can be deposited using ALD, including oxides, nitrides and metals. The ALD process is widely used, as it provides ultra-thin highly controllable mono-layers of material which are by nature conformal and pinhole free. The ALD market is expected to grow by a CAGR of 16%-20% from 2020 to 2025 (source: ASM).

伯東公司 Aston™ 質譜分析儀是一款快速, 強大的化學特異性氣體質譜儀, 提供 ALD 程序控制解決方案, 可在這些非等離子體(“lights-off”) 過程中提供原位計量和控制. 它可以實現快速, 化學特定的原位定量氣體分析, 低至十億分之幾的水準, 提供有效 ALD 程序控制所需的即時資料.
Fast, robust chemically specific mass spectrometry, such as Aston from Atonarp, is a new solution to provide in-situ metrology and control in these non-plasma (‘lights-off’) processes. It enables rapid, chemically specific in-situ quantitative gas analysis down to the parts per billion level, delivering the real-time data needed for effective ALD process control.

伯東公司日本 Aston™ 質譜儀 “lights-out” ALD 工藝的原位計量解決方案
為實現有效的 ALD 工藝監測和控制, 需要一種高速化學特定量化計量解決方案, 該解決方案可以處理苛刻的工藝氣體, 例如鹽酸或氫氟酸副產物, 並且可以處理在過程中可能在腔室表面形成的冷凝顆粒.
For effective ALD process monitoring and control, a high speed chemically specific quantified metrology solution is needed that can work with harsh process gases such as hydrochloric or hydrofluoric acid by products, and can handle condensate particles which can form on chamber surfaces during processing.

計量解決方案必須量化存在的氣體, 以便在多個操作階段之間實現準確, 快速和有效的轉換: 前體氣體注入, 氣體吹掃, 反應氣體注入和副產品氣體去除. 通常, 每個完整的週期只需幾秒鐘, 因此計量解決方案必須以高取樣速率和靈敏度即時工作.
The metrology solution must quantify the gases present, to enable accurate, rapid and efficient transitions between the multiple phases of operation: precursor gas injection, gas purge, reactant gas injection and by-product gas removal. Typically, each complete cycle takes just a few seconds, so the metrology solution must work in real-time with a high sample rate and sensitivity.

然而, 大多數 ALD 工藝沒有等離子體或使用弱的遠端等離子體源. 這意味著諸如光學發射光譜 OES 等傳統的原位計量技術在黑暗中迷失. 由於沒有強等離子源使其能夠運行, 因此由於信噪比低或根本沒有信號, 它們無法提供所需的資訊.
However, most ALD processes have no plasma or use a weak, remote plasma source. This means that legacy in-situ metrology techniques such as Optical Emission Spectroscopy (OES) are left in the dark. With no strong plasma source to enable their operation, they are unable to provide the information required due to low signal-to-noise ratio or no signal at all. 

如果沒有原位計量, 這些工藝步驟轉換通常會運行固定的持續時間, 這會導致處理效率低下, 因為必須在步驟之間留出足夠的餘量以確保前體和反應氣體不會無意中混合到腔室中. 在沒有計量的情況下運行 ALD 工藝也會面臨嚴重的生產線產量損失或工藝偏差的風險, 例如, 如果其中一種反應氣體濃度波動高或低.
Without in-situ metrology, these process step transitions are typically run for a fixed duration, which leads to processing inefficiency, because sufficient margin between steps must be left to ensure precursor and reactant gases do not inadvertently mix in the chamber. Running ALD processes without metrology also runs the risk of significant line yield loss or process excursions for example, if one of the reactant gas concentrations fluctuates high or low.

伯東公司 Aston™ 質譜儀可在這些非等離子體（“lights-off”）過程中提供原位計量和控制. 它可以實現快速, 化學特定的原位定量氣體分析, 低至十億分之幾的水準, 提供有效 ALD 程序控制所需的即時資料.
Atonarp is a new solution to provide in-situ metrology and control in these non-plasma (‘lights-off’) processes. It enables rapid, chemically specific in-situ quantitative gas analysis down to the parts per billion level, delivering the real-time data needed for effective ALD process control.

Aston™ 質譜分析儀技術參數

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