KRI 離子源應用報告

1978 年 Dr. Kaufman 博士在美國創立 Kaufman & Robinson, Inc 公司, 研發生產考夫曼離子源, 霍爾離子源和射頻離子源. 美國考夫曼離子源歷經 40 年改良及發展已取得多項專利. 離子源廣泛用於離子清洗 PC, 離子蝕刻 IBE, 輔助鍍膜 IBAD, 離子濺射鍍膜 IBSD 領域, 伯東公司是美國考夫曼離子源大中華地區總代理.
KRI 考夫曼離子源
            霍爾離子源                               射頻離子源                        考夫曼離子源                                   自動控制器  

考夫曼離子源在半導體材料中的預清洗及刻蝕應用

SiO2 在刻蝕前需要將其表面的有機物, 顆粒, 金屬雜質, 自然氧化層等去除, 且不破壞晶體的表面特性

Shift-Free Optical Coatings

Shift-Free Optical Coatings(Staff of Vacuum Innovations LLC)

The deposition of optical interference coatings requires precise control of layer thicknesses and refractive indices in order to yield predictable, reliable performance. One of the challenges in the use of evaporated coatings is the porous film structure and the associated sensitivity to relative humidity and temperature which results from the low energy of the deposited molecules
 

Broad-Beam Industrial Ion Sources

Broad-Beam Industrial Ion Sources (Staff of Kaufman & Robinson, Inc.)

A broad ion beam is typically several centimeters or more in diameter. The beam diameter is also much larger than the Debye length, which is the typical distance an electric field can penetrate into a plasma. If a broad beam is to be kept near ground potential, it must be neutralized (see Tech. Note KRI-02). For neutralization, there must be approximately equal numbers of electrons and positively charged ions in each volume of the ion beam. For a dielectric target, the electrons and ions must arrive in equal numbers. The target can be either a sputter target or a substrate. The ion energy in a broad ion beam is 2000 eV or less. (A singly charged ion “falling” through a potential difference of 2000 V acquires an energy of 2000 eV.) To minimize damage, the energy is usually 1000 eV or less. High energy implanting-type applications are not consider-ed here. Concern about damage to processed surfaces has led to decreased ion energies. There are two general categories of broad-beam ion sources: gridded and gridless.

 

Ion-Beam Neutralization

Ion-Beam Neutralization

As described in Technical Note KRI-01, an ion beam from a broad-beam industrial source must be neutralized. This is done by emitting electrons from a neutralizer. A hot-filament, plasma-bridge, or hollow-cathode type of neutralizer may be used. The ion source in Fig. 1 could be either gridded or gridless. For a gridless source, the neutralizer is a called a cathode-neutralizer. The target can be a sputter target or a substrate being etched. Connected to a voltmeter in Fig. 1, it serves as a neutralization probe.

 

Gas Cleanliness

Gas Cleanliness

Gas cleanliness is important to some vacuum-process equipment and processes. For example, contamination can decrease the lifetime of hollow cathodes and plasma-bridge neutralizers by a factor of ten or more. The techniques required to assure gas cleanliness are reviewed herein.

In-Situ Cleaning for Thin-Film Deposition

In-Situ Cleaning for Thin-Film Deposition

Thin films are deposited on substrates in a variety of vacuum deposition processes. The properties of such a deposited film depends on the cleanliness of the substrate surface on which the film is deposited. Contamination on this surface can result in reduced adhesion of the film to the substrate, more rapid degradation of the film after deposition, greater contact resistance for electrically conducting films, and poor optical qualities for optical films.

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